BUK9120-48TC Datasheet, PDF (1/9 Pages) NXP Semiconductors – PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes

Philips Semiconductors
PowerMOS transistor
Voltage clamped logic level FET
with temperature sensing diodes
Product specification
BUK9120-48TC
GENERAL DESCRIPTION
Protected N-channel enhancement
mode logic level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’ technology the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV and active
drain voltage clamping. Temperature
sensitive diodes are incorporated for
monitoring chip temperature.
The device is intended for use in
automotive and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MIN. TYP. MAX. UNIT
V_(CL)DSR
I_D
P_tot
T_j
R_DS(ON)
V_F
-S_F
Drain-source clamp voltage
40 45 55 V
Drain current (DC)
52 A
Total power dissipation
116 W
Junction temperature
175 ˚C
Drain-source on-state
20 mΩ
resistance; V_GS = 5 V
Forward voltage,temperature 685 710 735 mV
sense diodes
Negative temperature
1.26 1.4 1.54 mV/K
coefficient, temperature sense
diodes
PINNING - SOT426
PIN
DESCRIPTION
1 gate
2 T1
3 (connected to mb)
4 T2
5 source
mb drain
PIN CONFIGURATION
mb
3
12 45
Fig. 1.
SYMBOL
d
T1
g
T2
s
Fig. 2.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DS
V_DG
±V_GS
I_D
I_D
I_D
I_DM
P_tot
I_GD
I_GS
V_TS
T_stg
T_j
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (DC)
Drain current (pulse peak
value)
Total power dissipation
Drain-gate clamp current
Gate-source clamp current
Source T1/T2 voltage
Storage temperature
Junction temperature
continuous
continuous
-
T_mb = 25 ˚C
T_mb = 100 ˚C
T_mb = 140 ˚C
T_mb = 25 ˚C
T_mb = 25 ˚C
5ms pulse; ∆ = 0.01
5ms pulse; ∆ = 0.01
-
-
-
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
- 55
MAX.
40
38
10
52
37
25
208
116
50
50
±100
175
175
UNIT
V
V
V
A
A
A
A
W
mA
mA
V
˚C
˚C
February 1998
1
Rev 1.100