BUK866-400IZ Datasheet, PDF (1/8 Pages) NXP Semiconductors – Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

Philips Semiconductors
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
Product specification
BUK866-400 IZ
GENERAL DESCRIPTION
Protected N-channel logic-level
insulated gate bipolar power
transistor in a plastic envelope
suitable for surface mount
applications. It is intended for
automotive ignition applications, and
has integral zener diodes providing
active collector voltage clamping and
ESD protection up to 2 kV.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MIN. TYP. MAX. UNIT
V_(CL)CER
V_CEsat
I_C
P_tot
E_CERS
Collector-emitter clamp voltage 350 400 500 V
Collector-emitter on-state voltage
2.2 V
Collector current (DC)
20 A
Total power dissipation
100 W
Clamped energy dissipation
300 mJ
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
c
mb
1 gate
2 collector
3 emitter
tab collector
2
13
g
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CE
V_CE
±V_GE
I_C
I_C
I_CM
I_CLM
E_CERS
E_CERR
E_ECR
P_tot
T_stg
T_j
Collecter-emitter voltage
t_p ≤ 500 µs
Collector-emitter voltage
Continuous
Gate-emitter voltage
-
Collector current (DC)
T_mb = 100 ˚C
Collector current (DC)
T_mb = 25 ˚C
Collector current (pulsed peak value, T_mb = 25 ˚C; t_p ≤ 10 ms;
on-state)
V_CE ≤ 15 V
Collector current (clamped inductive 1 kΩ ≤ R_G ≤ 10 kΩ
load)
Clamped turn-off energy
(non-repetitive)
T_mb = 25 ˚C; I_C = 10 A; R_G = 1 kΩ;
see Figs. 23,24
Clamped turn-off energy (repetitive) T_mb = 125 ˚C; I_C = 8 A; R_G = 1 kΩ;
f = 50 Hz; t = 60 min.
Reverse avalanche energy
(repetitive)
I_E = 1 A; f = 50 Hz
Total power dissipation
Storage temperature
T_mb = 25 ˚C
-
Operating Junction Temperature -
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
-20
-
-
-
-
-
-
-
-
-
-55
-40
MIN.
-
MAX.
500
50
12
10
20
25
10
300
125
5
125
150
150
MAX.
2
UNIT
V
V
V
A
A
A
A
mJ
mJ
mJ
W
˚C
˚C
UNIT
kV
December 1996
1
Rev. 1.100