BUK856-800A Datasheet, PDF (1/7 Pages) NXP Semiconductors – Insulated Gate Bipolar Transistor IGBT

Philips Semiconductors
Insulated Gate Bipolar Transistor (IGBT)
Product Specification
BUK856-800A
GENERAL DESCRIPTION
Fast-switching N-channel insulated
gate bipolar power transistor in a
plastic envelope.
The device is intended for use in
motor control, DC/DC and AC/DC
converters, and in general purpose
high frequency switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CE
I_C
P_tot
V_CEsat
E_off
Collector-emitter voltage
Collector current (DC)
Total power dissipation
Collector-emitter on-state voltage
Turn-off energy Loss
MAX.
800
24
125
3.5
1.0
UNIT
V
A
W
V
mJ
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
c
tab
1 gate
2 collector
3 emitter
g
tab collector
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_CE
Collector-emitter voltage
-
-5
V_CGR
Collector-gate voltage
R_GE = 20 kΩ
-
±V_GE
Gate-emitter voltage
-
-
I_C
Collector current (DC)
T_mb = 25 ˚C
-
I_C
Collector current (DC)
T_mb = 100 ˚C
-
I_CLM
Collector Current (Clamped
T_j ≤ T_jmax.
-
Inductive Load)
V_CL ≤ 500 V
I_CM
Collector current (pulsed peak value, T_j ≤ T_jmax.
-
on-state)
P_tot
Total power dissipation
T_stg
Storage temperature
T_j
Junction Temperature
T_mb = 25 ˚C
-
-
- 55
-
-
THERMAL RESISTANCES
SYMBOL
R_{th j-mb}
R_{th j-a}
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
In free air
TYP.
-
60
MAX.
800
800
30
24
12
40
50
125
150
150
MAX.
1.0
-
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
March 1993
1
Rev 1.000