BUK7Y18-75B_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7Y18-75B
N-channel TrenchMOS standard level FET
1 March 2013
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
2. Features and benefits
• Q101 compliant
• Suitable for standard level gate drive sources
• Suitable for thermally demanding environments due to 175 °C rating
3. Applications
• 12 V, 24 V and 42 V loads
• Automotive systems
• DC-to-DC converters
• Engine management
• General purpose power switching
• Motors, lamps and solenoids
• Transmission control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1; Fig. 4
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 20 A; T_j = 25 °C;
resistance
Fig. 12; Fig. 13
Dynamic characteristics
Q_GD
gate-drain charge
I_D = 20 A; V_DS = 60 V; V_GS = 10 V;
Fig. 14
Min Typ Max Unit
-
-
75
V
-
-
49
A
-
-
105 W
-
13.8 18
mΩ
-
14.24 -
nC
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