BUK7Y13-40B_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7Y13-40B
N-channel TrenchMOS standard level FET
Rev. 03 — 26 May 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ 175 °C rated
„ Suitable for standard level gate drive
sources
„ Q101 compliant
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive ABS systems
„ Fuel pump and injection
„ Air bag
„ Automotive transmission control
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
Dynamic characteristics
Q_GD
gate-drain charge
Static characteristics
R_DSon
drain-source on-state
resistance
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C;
see Figure 1 and 4
T_mb = 25 °C; see Figure 2
I_D = 10 A; V_DS = 32 V;
V_GS = 10 V; see Figure 14
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 13 and
12
I_D = 58 A; V_sup ≤ 40 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
40 V
-
-
58 A
-
-
85 W
-
5-
nC
-
11 13 mΩ
-
-
85 mJ