BUK7Y08-40B_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7Y08-40B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 4; see Figure 1
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 75 A; V_sup ≤ 40 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
Q_GD
gate-drain charge I_D = 25 A; V_DS = 32 V;
V_GS = 10 V; see Figure 14
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
40 V
[1]
-
-
75 A
-
-
105 W
-
68
mΩ
-
-
146 mJ
-
14.7 -
nC