BUK7L11-34ARC Datasheet, PDF (1/14 Pages) NXP Semiconductors – TrenchPLUS standard level FET

BUK7L11-34ARC
TrenchPLUS standard level FET
Rev. 03 — 3 December 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, integral gate
resistor, ESD protection diodes and clamping diodes to protect the MOSFET from
avalanching.
1.2 Features
s ESD and overvoltage protection
s Internal gate resistor
s Q101 compliant
s On-state resistance 8 mΩ (typ).
1.3 Applications
s 12 V loads
s Motors, lamps and solenoids.
1.4 Quick reference data
s V_DSR(CL) = 41 V (typ)
s I_D ≤ 89 A
s R_DSon = 8 mΩ (typ)
s P_tot ≤ 172 W.
2. Pinning information
Table 1: Pinning - SOT78C, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
mb
2 drain (d)
3 source (s)
mb mounting base,
connected to drain (d)
123
MBL370
SOT78C (TO-220)
Symbol
g
d
s
MBL521