BUK7K5R6-30E_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Dual N-channel 30 V, 5.6 mΩ standard level MOSFET

BUK7K5R6-30E
Dual N-channel 30 V, 5.6 mΩ standard level MOSFET
6 November 2013
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to
AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• Dual MOSFET
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with V_GS(th) of greater than 1 V at 175 °C
3. Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
R_DSon
drain-source on-state V_GS = 10 V; I_D = 20 A; T_j = 25 °C;
resistance
Fig. 12
Dynamic characteristics FET1 and FET2
Q_GD
gate-drain charge
I_D = 10 A; V_DS = 24 V; V_GS = 10 V;
T_j = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
-
-
30
V
-
-
40
A
-
4.76 5.6 mΩ
-
9.5 -
nC
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