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BUK7K17-60E_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Dual N-channel 60 V, 14 m standard level MOSFET | |||
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BUK7K17-60E
Dual N-channel 60 V, 14 m⦠standard level MOSFET
10 December 2013
Product data sheet
1. General description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to
AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
⢠Dual MOSFET
⢠Q101 compliant
⢠Repetitive avalanche rated
⢠Suitable for thermally demanding environments due to 175 °C rating
⢠True standard level gate with VGS(th) of greater than 1 V at 175 °C
3. Applications
⢠12 V Automotive systems
⢠Motors, lamps and solenoid control
⢠Transmission control
⢠Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 10 A; VDS = 48 V; VGS = 20 V;
Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package
Min Typ Max Unit
-
-
60
V
[1]
-
-
30
A
-
-
53
W
-
11.3 14
mΩ
-
8.1 -
nC
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