BUK7907-55ATE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

BUK7907-55ATE
N-channel TrenchPLUS standard level FET
Rev. 03 — 9 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Q101 compliant
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ 12 V and 24 V high power motor
drives
„ Automotive and general purpose
power switching
„ Electrical Power Assisted Steering
(EPAS)
„ Protected drive for lamps
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C; see Figure 2; see Figure 3
T_mb = 25 °C; see Figure 1
V_GS = 10 V; I_D = 50 A; T_j = 175 °C; see Figure 7;
see Figure 8
V_GS = 10 V; I_D = 50 A; T_j = 25 °C; see Figure 7;
see Figure 8
S_F(TSD) temperature sense diode I_F = 250 µA; T_j > -55 °C; T_j < 175 °C
temperature coefficient
V_F(TSD) temperature sense diode I_F = 250 µA; T_j = 25 °C
forward voltage
Min
-
[1] -
-
-55
-
-
-1.4
648
Typ Max Unit
-
55 V
-
140 A
-
272 W
-
175 °C
-
14 mΩ
5.8 7 mΩ
-1.54 -1.68 mV/K
658 668 mV
[1] Current is limited by power dissipation chip rating.