BUK7675-100A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7675-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 31 July 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1 and 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Static characteristics
I_D = 14 A; V_sup ≤ 100 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 13 A;
T_j = 175 °C; see Figure 12
and 13
V_GS = 10 V; I_D = 13 A;
T_j = 25 °C; see Figure 12
and 13
Min Typ Max Unit
-
-
100 V
-
-
23 A
-
-
99 W
-
-
100 mJ
-
-
187 mΩ
-
64 75 mΩ