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BUK764R0-55B_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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BUK764R0-55B
N-channel TrenchMOS standard level FET
Rev. 5 â 22 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
 AEC Q101 compliant
 Low conduction losses due to low
on-state resistance
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V and 24 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A;
resistance
Tj = 25 °C; see Figure 7;
see Figure 12
Min Typ Max Unit
-
-
55 V
[1] -
-
75 A
-
-
300 W
-
3.4 4 mâ¦
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