BUK763R6-40C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK763R6-40C
N-channel TrenchMOS standard level FET
Rev. 04 — 16 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
 AEC Q101 compliant
 Avalanche robust
 Suitable for standard level gate drive
 Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
 12V Motor, lamp and solenoid loads
 High performance automotive power
systems
 High performance Pulse Width
Modulation (PWM) applications