BUK6C2R1-55C_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

BUK6C2R1-55C
N-channel TrenchMOS intermediate level FET
Rev. 3 — 18 January 2012
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in high-performance automotive
applications.
1.2 Features and benefits
 AEC Q101 compliant
 High current handling capability, up to
320 A
 Low conduction losses due to very low
on-state resistance
 Suitable for standard and logic level
gate drive sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V automotive systems
 Electric and electro-hydraulic power
steering
 Motors, lamps and solenoids
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V_DS
I_D
Parameter
drain-source voltage
drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
Min Typ Max Unit
-
-
55 V
-
-
228 A
P_tot
total power dissipation T_mb = 25 °C; see Figure 2 -
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 90 A;
-
resistance
T_j = 25 °C;
see Figure 11
-
300 W
1.9 2.3 mΩ