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BUK6213-30C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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BUK6213-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 â 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
 AEC Q101 compliant
 Suitable for standard and logic level
gate drives
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V automotive systems
 Electric and electro-hydraulic power
steering
 Motors, lamps and solenoid control
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
VGS = 10 V; ID = 10 A;
Tj = 25 °C; see Figure 11
EDS(AL)S
non-repetitive
ID = 47 A; Vsup ⤠30 V;
drain-source avalanche RGS = 50 â¦; VGS = 10 V;
energy
Tj(init) = 25 °C; unclamped
Dynamic characteristics
QGD
gate-drain charge
ID = 25 A; VDS = 24 V;
VGS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
-
-
30 V
-
-
47 A
-
-
60 W
-
11.9 14 mâ¦
-
-
30 mJ
-
4.77 -
nC
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