BUJ202AX Datasheet, PDF (1/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BUJ202AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CBO
V_CEO
I_C
I_CM
P_tot
V_CEsat
t_f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
CONDITIONS
V_BE = 0 V
T_mb ≤ 25 ˚C
I_C = 1.0 A;I_B = 0.2 A
Ic=1A,I_B1=0.2A,I_B2=0.2A
TYP.
-
-
-
-
-
-
-
88
MAX.
850
850
450
2
3
18
1.0
150
UNIT
V
V
V
A
A
W
V
ns
PINNING - SOT186A
PIN
DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
V_CBO
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_mb ≤ 25 ˚C
THERMAL RESISTANCES
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
850
450
850
2
3
0.75
1
18
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
55
MAX.
7.2
-
UNIT
K/W
K/W
August 1998
1
Rev 1.000