BU4550AL Datasheet, PDF (1/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BU4550AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
I_Csat
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
t_f
Fall time
CONDITIONS
V_BE = 0
T_mb ≤ 25 ˚C
I_C = 20.0 A; I_B = 5 A
f = 32kHz
f = 130kHz
I_Csat = 20 A; f = 32kHz
I_Csat = 8 A; f = 130kHz
TYP.
-
-
-
-
-
-
20
8
t.b.f
t.b.f
MAX.
1500
800
30
40
125
3.0
-
-
t.b.f
t.b.f
UNIT
V
V
A
A
W
V
A
A
µs
µs
PINNING - SOT430
PIN
DESCRIPTION
1 base
2 collector
3 emitter
heat collector
sink
PIN CONFIGURATION
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
-I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value ¹
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_mb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-mb}
R_{th j-a}
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
25
40
10
15
10
125
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
35
MAX.
1.0
-
UNIT
K/W
K/W
1 Turn-off current.
January 1998
1
Rev 1.000