BU4525DL Datasheet, PDF (1/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4525DL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with integrated damper diode intended intended for use in horizontal deflection circuits of colour television receivers
and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a
very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
V_F
I_Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Collector saturation current
t_f
Fall time
CONDITIONS
V_BE = 0 V
T_hs ≤ 25 ˚C
I_C = 9.0 A; I_B = 2.25 A
I_F = 9.0 A
f = 16 kHz
f = 70 kHz
I_Csat = 9.0 A;f = 16 kHz
f = 70 kHz
TYP.
-
-
-
-
-
-
-
9.0
t.b.f
0.4
t.b.f
MAX.
1500
800
14
30
125
3.0
2.2
-
-
0.55
t.b.f
UNIT
V
V
A
A
W
V
V
A
A
µs
µs
PINNING - SOT430
PIN
DESCRIPTION
1 base
2 collector
3 emitter
heat collector
sink
PIN CONFIGURATION
1 23
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
-I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value ¹
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_hs ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
14
30
8
12
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
1 Turn-off current.
July 1998
1
Rev 1.000