BU4525AL Datasheet, PDF (1/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BU4525AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
I_Csat
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
t_f
Fall time
CONDITIONS
V_BE = 0 V
T_mb ≤ 25 ˚C
I_C = 9.0 A; I_B = 2.25A
f= 16 kHz
f= 70 kHz
I_Csat = 9.0 A; f = 16 kHz
I_Csat = 7.5 A; f = 70 kHz
TYP.
-
-
-
-
-
-
8.0
7.5
t.b.f
t.b.f
MAX.
1500
800
12
30
125
3.0
-
-
t.b.f
t.b.f
UNIT
V
V
A
A
W
V
A
A
µs
µs
PINNING - SOT430
PIN
DESCRIPTION
1 base
2 collector
3 emitter
heat collector
sink
PIN CONFIGURATION
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
-I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value ¹
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_mb ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
12
30
8
12
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
1 Turn-off current.
January 1998
1
Rev 1.000