BU4522DX Datasheet, PDF (1/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BU4522DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
I_Csat
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current (Fig 17)
V_F
Diode forward voltage
t_f
Fall time
CONDITIONS
V_BE = 0 V
T_hs ≤ 25 ˚C
I_C = 7 A; I_B = 1.75 A
f = 16 kHz
f = 64 kHz
I_F = 7.0 A
I_Csat = 7 A; f = 16 kHz
f = 64 kHz
TYP.
-
-
-
-
-
-
7
6
-
285
t.b.f
MAX.
1500
800
10
25
45
3.0
-
-
2.2
400
t.b.f
UNIT
V
V
A
A
W
V
A
A
V
ns
ns
PINNING - SOT399
PIN
DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
-I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value ¹
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_hs ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
10
25
6
9
6
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
1 Turn-off current.
July 1998
1
Rev 1.000