BU2525DX Datasheet, PDF (1/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2525DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
32 kHz.
QUICK REFERENCE DATA
SYMBOL
V_CESM
I_C
I_CM
P_tot
V_CEsat
V_CEO
I_Csat
t_s
PARAMETER
Collector-emitter voltage peak value
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter voltage (open base)
Collector saturation current
Storage time
CONDITIONS
V_BE = 0 V
T_hs ≤ 25 ˚C
I_C = 8.0 A; I_B = 1.6 A
I_Csat = 8.0 A; I_B(end) = 1.1 A
TYP.
-
-
-
-
-
-
8.0
3.0
MAX.
1500
12
30
45
5.0
800
-
4.0
UNIT
V
A
A
W
V
V
A
µs
PINNING - SOT399
PIN
DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
-I_B(AV)
-I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value ¹
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
average over any 20 ms period
T_hs ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-hs}
R_{th j-a}
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
12
30
8
12
200
9
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 1.200