BT300S Datasheet, PDF (1/6 Pages) NXP Semiconductors – Thyristors

Philips Semiconductors
Thyristors
Product specification
BT300S series
BT300M series
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, suitable for surface
mounting, intended for use in
applications
requiring
high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_DRM,
V_RRM
I_T(AV)
I_T(RMS)
I_TSM
BT300S (or BT300M)- 500R 600R 800R
Repetitive peak off-state
500 600 800 V
voltages
Average on-state current
5
5
5A
RMS on-state current
8
8
8A
Non-repetitive peak on-state 65 65 65 A
current
PINNING - SOT428
PIN Standard Alternative
NUMBER
S
M
1
cathode
gate
2
anode
anode
3
gate
cathode
tab
anode
anode
PIN CONFIGURATION
tab
2
1
3
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM, V_RRM Repetitive peak off-state
-
voltages
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
Average on-state current half sine wave; T_mb ≤ 107 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; T_j = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 10 A; I_G = 50 mA;
-
on-state current after
dI_G/dt = 50 mA/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-500R -600R -800R
500¹ 600¹ 800
5
8
65
71
21
50
2
5
5
5
0.5
150
125
UNIT
V
A
A
A
A
A²s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.100