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BT258U Datasheet, PDF (1/6 Pages) NXP Semiconductors – Thyristors logic level
Philips Semiconductors
Thyristors
logic level
Product specification
BT258U series
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors
in a plastic envelope, intended for use
in general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT258U- 500R 600R 800R
Repetitive peak off-state
500 600 800 V
voltages
Average on-state current
5
5
5A
RMS on-state current
8
8
8A
Non-repetitive peak on-state 75 75 75 A
current
PINNING - SOT533
PIN
NUMBER
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
PIN CONFIGURATION
123
Top view
MBK915
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
-
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Tmb ≤ 111 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I2t for fusing
t = 10 ms
-
Repetitive rate of rise of ITM = 10 A; IG = 50 mA;
-
on-state current after
dIG/dt = 50 mA/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-500R -600R -800R
5001 6001 800
5
8
75
82
28
50
2
5
5
5
0.5
150
1252
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
March 1999
1
Rev 1.000