BT258S-800R Datasheet, PDF (1/6 Pages) NXP Semiconductors – Thyristors logic level

Philips Semiconductors
Thyristors
logic level
Product specification
BT258S-800R
GENERAL DESCRIPTION
Passivated, sensitive gate thyristor in
a plastic envelope, suitable for
surface mounting, intended for use in
general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_DRM, V_RRM
I_T(AV)
I_T(RMS)
I_TSM
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
MAX. UNIT
800 V
5A
8A
75 A
PINNING - SOT428
PIN
NUMBER
1
cathode
2
anode
3
gate
tab
anode
PIN CONFIGURATION
tab
2
1
3
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V_DRM, V_RRM Repetitive peak off-state
-
voltages
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
Average on-state current half sine wave; T_mb ≤ 111 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; T_j = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 10 A; I_G = 50 mA;
-
on-state current after
dI_G/dt = 50 mA/µs
triggering
Peak gate current
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
800
5
8
75
82
28
50
2
5
5
0.5
150
125¹
V
A
A
A
A
A²s
A/µs
A
V
W
W
˚C
˚C
1 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 2002
1
Rev 2.000