BT258B Datasheet, PDF (1/6 Pages) NXP Semiconductors – Thyristors logic level

Philips Semiconductors
Thyristors
logic level
Product specification
BT258B series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope
suitable for surface mounting,
intended for use in general purpose
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_DRM,
V_RRM
I_T(AV)
I_T(RMS)
I_TSM
BT258B- 500R 600R 800R
Repetitive peak off-state
500 600 800 V
voltages
Average on-state current
5
5
5A
RMS on-state current
8
8
8A
Non-repetitive peak on-state 75 75 75 A
current
PINNING - SOT404
PIN
DESCRIPTION
1 cathode
2 anode
3 gate
mb anode
PIN CONFIGURATION
mb
2
13
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM, V_RRM Repetitive peak off-state
-
voltages
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
Average on-state current half sine wave; T_mb ≤ 111 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; T_j = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 10 A; I_G = 50 mA;
-
on-state current after
dI_G/dt = 50 mA/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-500R -600R -800R
500¹ 600¹ 800
5
8
75
82
28
50
2
5
5
5
0.5
150
125²
UNIT
V
A
A
A
A
A²s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
September 1997
1
Rev 1.100