BT169W Datasheet, PDF (1/7 Pages) NXP Semiconductors – Thyristor logic level

Philips Semiconductors
Thyristor
logic level
Product specification
BT169W Series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristor in a plastic envelope, suitable
for surface mounting, intended for use
in general purpose switching and
phase control applications. This
device is intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. MAX. UNIT
V_DRM,
V_RRM
I_T(AV)
I_T(RMS)
I_TSM
BT169 BW DW EW GW
Repetitive peak
200 400 500 600 V
off-state voltages
Average on-state
0.5 0.5 0.5 0.5 A
current
RMS on-state current 0.8 0.8 0.8 0.8 A
Non-repetitive peak
8
8
8
8A
on-state current
PINNING - SOT223
PIN
DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
4
1
2
3
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM, V_RRM Repetitive peak off-state
voltages
B
-
200¹
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
Average on-state current half sine wave;
-
T_sp ≤ 112 ˚C
RMS on-state current
all conduction angles
-
Non-repetitive peak
half sine wave;
on-state current
T_j = 25 ˚C prior to surge
t = 10 ms
-
t = 8.3 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 2 A; I_G = 10 mA;
-
on-state current after
dI_G/dt = 100 mA/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
D
E
400¹ 500¹
0.63
1
8
9
0.32
50
1
5
5
2
0.1
150
125
G
600¹
UNIT
V
A
A
A
A
A²s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200