BT168W Datasheet, PDF (1/7 Pages) NXP Semiconductors – Thyristors logic level for RCD/ GFI/ LCCB applications

Philips Semiconductors
Thyristors
logic level for RCD/ GFI/ LCCB applications
Product specification
BT168W series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope
suitable for surface mounting,
intended for use in Residual Current
Devices/ Ground Fault Interrupters/
Leakage Current Circuit Breakers
(RCD/ GFI/ LCCB)
applications
where a minimum I_GT limit is needed.
These devices may be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. MAX. UNIT
V_DRM,
V_RRM
I_T(AV)
I_T(RMS)
I_TSM
BT168 BW DW EW GW
Repetitive peak
200 400 500 600 V
off-state voltages
Average on-state
0.6 0.6 0.6 0.6 A
current
RMS on-state current 1
1
1
1A
Non-repetitive peak
8
8
8
8A
on-state current
PINNING - SOT223
PIN
DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
4
1
2
3
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM, V_RRM Repetitive peak off-state
voltages
B
-
200¹
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
Average on-state current half sine wave;
-
T_sp ≤ 112 ˚C
RMS on-state current
all conduction angles
-
Non-repetitive peak
t = 10 ms
-
on-state current
t = 8.3 ms
-
half sine wave;
I²t for fusing
T_j = 25 ˚C prior to surge
t = 10 ms
-
Repetitive rate of rise of I_TM = 2 A; I_G = 10 mA;
-
on-state current after
dI_G/dt = 100 mA/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
D
E
400¹ 500¹
0.63
1
8
9
0.32
50
1
5
5
2
0.1
150
125
G
600¹
UNIT
V
A
A
A
A
A²s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.100