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BT168GWF Datasheet, PDF (1/13 Pages) NXP Semiconductors – Fast commutation performance for higher frequency operation
BT168GWF
SCR
11 July 2014
Product data sheet
1. General description
Planar passivated SCR with faster switching performance and sensitive gate in a
SOT223 surface mounted plastic package. This SCR with enhanced commutation
performance is also designed to be interfaced directly to microcontrollers, logic integrated
circuits and other low power gate trigger circuits.
2. Features and benefits
• Fast commutation performance for higher frequency operation
• Full wave rectified AC applications
• Sensitive gate
• Direct triggering from microcontrollers, low power drivers and logic ICs
3. Applications
• Earth leakage circuit breakers (ELCB/GFI)
• Ignition circuits (gas appliances, small engines and HID lighting)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
VRRM
repetitive peak reverse
voltage
ITSM
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
IT(AV)
average on-state
current
half sine wave; Tsp ≤ 112 °C; Fig. 1
IT(RMS)
RMS on-state current half sine wave; Tsp ≤ 112 °C; Fig. 2;
Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 9
Min Typ Max Unit
-
-
600 V
-
-
600 V
-
-
8
A
-
-
0.63 A
-
-
1
A
70
200 450 µA
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