BT152 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Thyristors

Philips Semiconductors
Thyristors
Product specification
BT152 series
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_DRM,
V_RRM
I_T(AV)
I_T(RMS)
I_TSM
BT152- 400R 600R 800R
Repetitive peak off-state
450 650 800 V
voltages
Average on-state current
13 13 13 A
RMS on-state current
20 20 20 A
Non-repetitive peak on-state 200 200 200 A
current
PINNING - TO220AB
PIN
DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
tab
1 23
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state
-
voltages
Average on-state current half sine wave; T_mb ≤ 103 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; T_j = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 50 A; I_G = 0.2 A;
-
on-state current after
dI_G/dt = 0.2 A/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-400R -600R -800R
450¹ 650¹ 800
13
20
200
220
200
200
5
5
5
20
0.5
150
125
UNIT
V
A
A
A
A
A²s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997
1
Rev 1.200