BT151UC Datasheet, PDF (1/6 Pages) NXP Semiconductors – Thyristors

Philips Semiconductors
Thyristors
Product specification
BT151U series C
GENERAL DESCRIPTION
Passivated thyristors in a plastic
envelope, intended for use in
applications requiring high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial
and domestic lighting, heating and
static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_DRM,
V_RRM
I_T(AV)
I_T(RMS)
I_TSM
BT151U-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state
current
MAX.
500C
500
7.5
12
100
MAX.
650C
650
7.5
12
100
MAX. UNIT
800C
800 V
7.5
A
12
A
100 A
PINNING - SOT533, (I-PAK)
PIN
NUMBER
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
PIN CONFIGURATION
123
Top view
MBK915
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM, V_RRM Repetitive peak off-state
-
voltages
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
Average on-state current half sine wave; T_mb ≤ 104 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; T_j = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 20 A; I_G = 50 mA;
-
on-state current after
dI_G/dt = 50 mA/µs
triggering
Peak gate current
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Junction temperature
-
MAX.
-500C -650C -800C
500¹ 650¹ 800
7.5
12
100
110
50
50
2
5
5
0.5
150
125
UNIT
V
A
A
A
A
A²s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
April 2004
1
Rev 1.000