BT151F Datasheet, PDF (1/6 Pages) NXP Semiconductors – Thyristors

Philips Semiconductors
Thyristors
Product specification
BT151F series
GENERAL DESCRIPTION
Glass passivated thyristors in a full
pack, plastic envelope, intended for
use in applications requiring high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_DRM,
V_RRM
I_T(AV)
I_T(RMS)
I_TSM
BT151F- 500 650 800
Repetitive peak off-state
500 650 800 V
voltages
Average on-state current
5.7 5.7 5.7 A
RMS on-state current
9
9
9A
Non-repetitive peak on-state 100 100 100 A
current
PINNING - SOT186
PIN
DESCRIPTION
1 cathode
2 anode
3 gate
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM, V_RRM Repetitive peak off-state
-
voltages
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
Average on-state current half sine wave; T_hs ≤ 87 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; T_j = 125 ˚C prior
to surge; with reapplied V_DRM(max)
t = 10 ms
-
t = 8.3 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 20 A; I_G = 50 mA;
-
on-state current after
dI_G/dt = 50 mA/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
-500
500¹
MAX.
-650
650¹
5.7
9
100
110
50
50
2
5
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
A²s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 1996
1
Rev 1.100