BT149 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Thyristors logic level

Philips Semiconductors
Thyristors
logic level
Product specification
BT149 series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in general purpose
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. MAX. UNIT
V_DRM,
V_RRM
I_T(AV)
I_T(RMS)
I_TSM
BT149 B
D
E
G
Repetitive peak
200 400 500 600 V
off-state voltages
Average on-state
0.5 0.5 0.5 0.5 A
current
RMS on-state current 0.8 0.8 0.8 0.8 A
Non-repetitive peak
8
8
8
8A
on-state current
PINNING - TO92 variant
PIN
DESCRIPTION
1 cathode
2 gate
3 anode
PIN CONFIGURATION
3 21
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM, V_RRM Repetitive peak off-state
voltages
B
-
200¹
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
Average on-state current half sine wave;
-
T_lead ≤ 83 ˚C
RMS on-state current
all conduction angles
-
Non-repetitive peak
t = 10 ms
-
on-state current
t = 8.3 ms
-
half sine wave;
I²t for fusing
T_j = 25 ˚C prior to surge
t = 10 ms
-
Repetitive rate of rise of I_TM = 2 A; I_G = 10 mA;
-
on-state current after
dI_G/dt = 100 mA/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
D
E
400¹ 500¹
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
150
125
G
600¹
UNIT
V
A
A
A
A
A²s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200