BT148S-600Z Datasheet, PDF (1/6 Pages) NXP Semiconductors – Thyristors logic level

Philips Semiconductors
Thyristors
logic level
Product specification
BT148S-600Z
BT148M-600Z
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate thyristor in
a plastic envelope, suitable for surface
mounting, intended for use in general
purpose switching and phase control
applications. These devices feature a
gate-cathode reverse breakdown voltage
specification. They can be interfaced
directly to microcontrollers, logic integrated
circuits and other low power gate trigger
circuits.
SYMBOL
V_DRM,
V_RRM
I_T(AV)
I_T(RMS)
I_TSM
PARAMETER
BT148S (or BT148M)-
Repetitive peak off-state
voltage
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. UNIT
600Z
600 V
2.5
A
4
A
35
A
PINNING - SOT428
PIN Standard Alternative
NUMBER
S
M
1
cathode
gate
2
anode
anode
3
gate
cathode
tab
anode
anode
PIN CONFIGURATION
tab
2
1
3
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
V_DRM, V_RRM
I_T(AV)
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state voltage
Average on-state current
RMS on-state current
half sine wave; T_mb ≤ 111 ˚C
all conduction angles
Non-repetitive peak on-state
current
half sine wave; T_j = 25 ˚C prior to surge
t = 10 ms
t = 8.3 ms
I²t for fusing
t = 10 ms
Repetitive rate of rise of on-state I_TM = 10 A; I_G = 50 mA;
current after triggering
dI_G/dt = 50 mA/µs
Peak gate current
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction temperature
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
600¹
2.5
4
35
38
6.1
50
2
5
0.5
150
125²
UNIT
V
A
A
A
A
A²s
A/µs
A
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
September 1997
1
Rev 1.100