BT139BH Datasheet, PDF (1/6 Pages) NXP Semiconductors – Triacs high noise immunity

Philips Semiconductors
Triacs
high noise immunity
Product specification
BT139B series H
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope suitable for surface
mounting, intended for use in
applications requiring high noise
immunity in addition to high,
bidirectional blocking voltage
capability and thermal cycling
performance. Typical applications
include motor control, industrial
lighting, heating and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_DRM
I_T(RMS)
I_TSM
BT139B- 500H 600H 800H
Repetitive peak off-state
500 600 800 V
voltages
RMS on-state current
16 16 16 A
Non-repetitive peak on-state 140 140 140 A
current
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1 main terminal 1
2 main terminal 2
mb
T2
T1
3 gate
2
mb main terminal 2
13
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state
-
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T_mb ≤ 99 ˚C
-
full sine wave; T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 20 A; I_G = 0.2 A;
on-state current after
dI_G/dt = 0.2 A/µs
triggering
T2+ G+
-
T2+ G-
-
T2- G-
-
T2- G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
-500
500¹
MAX.
-600
600¹
16
140
150
98
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997
1
Rev 1.000