BT137S-600D Datasheet, PDF (1/6 Pages) NXP Semiconductors – Triacs logic level

Philips Semiconductors
Triacs
logic level
Product specification
BT137S-600D
GENERAL DESCRIPTION
Passivated, sensitive gate triac in a
plastic envelope, suitable for surface
mounting, intended for use in general
purpose bidirectional switching and
phase control applications. This device
is intended to be interfaced directly to
microcontrollers, logic integrated circuits
and other low power gate trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_DRM
I_T(RMS)
I_TSM
Repetitive peak off-state voltage
RMS on-state current
Non-repetitive peak on-state current
PINNING - SOT428
PIN DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
MAX. UNIT
600 V
8
A
65 A
1
MT1
2
MT2
3
gate
tab
MT2
T2
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state
-
voltage
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T_mb ≤ 102 ˚C
-
full sine wave; T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 12 A; I_G = 0.2 A;
on-state current after
dI_G/dt = 0.2 A/µs
triggering
T2+ G+
-
T2+ G-
-
T2- G-
-
T2- G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
600¹
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
T1
G
UNIT
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
June 2001
1
Rev 1.400