BT137B-600E Datasheet, PDF (1/6 Pages) NXP Semiconductors – Triacs sensitive gate

Philips Semiconductors
Triacs
sensitive gate
Product specification
BT137B series E
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a
plastic envelope suitable for surface
mounting, intended for use in general
purpose bidirectional switching and
phase control applications, where high
sensitivity is required in all four
quadrants.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. UNIT
V_DRM
I_T(RMS)
I_TSM
BT137B- 600E 800E
Repetitive peak off-state
600 800 V
voltages
RMS on-state current
8
8
A
Non-repetitive peak on-state
65 65 A
current
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1 main terminal 1
2 main terminal 2
mb
T2
T1
3 gate
2
mb main terminal 2
13
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state
-
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T_mb ≤ 102 ˚C
-
full sine wave; T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 12 A; I_G = 0.2 A;
on-state current after
dI_G/dt = 0.2 A/µs
triggering
T2+ G+
-
T2+ G-
-
T2- G-
-
T2- G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-600
600¹
-800
800
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
June 2001
1
Rev 1.400