BT136SD Datasheet, PDF (1/6 Pages) NXP Semiconductors – Triacs logic level

Philips Semiconductors
Triacs
logic level
Product specification
BT136S series D
BT136M series D
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope suitable for
surface mounting, intended for use in
general purpose bidirectional
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. UNIT
V_DRM
I_T(RMS)
I_TSM
BT136S (or BT136M)- 500D 600D
Repetitive peak off-state
500 600 V
voltages
4
4A
RMS on-state current
25 25 A
Non-repetitive peak on-state current
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN Standard Alternative
tab
NUMBER
S
M
1
MT1
gate
T2
T1
2
MT2
MT2
3
gate
MT1
2
G
tab
MT2
MT2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state
-
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T_mb ≤ 107 ˚C
-
full sine wave; T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 6 A; I_G = 0.2 A;
on-state current after
dI_G/dt = 0.2 A/µs
triggering
T2+ G+
-
T2+ G-
-
T2- G-
-
T2- G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-500
500¹
-600
600¹
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
July 1997
1
Rev 1.000