BT136S Datasheet, PDF (1/6 Pages) NXP Semiconductors – Triacs

Philips Semiconductors
Triacs
Product specification
BT136S series
BT136M series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope, suitable for surface
mounting, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling performance. Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_DRM
I_T(RMS)
I_TSM
BT136S (or BT136M)- 500 600 800
BT136S (or BT136M)- 500F 600F 800F
BT136S (or BT136M)- 500G 600G 800G
Repetitive peak off-state
500 600 800 V
voltages
RMS on-state current
4
4
4A
Non-repetitive peak on-state 25 25 25 A
current
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN Standard Alternative
tab
NUMBER
S
M
1
MT1
gate
T2
T1
2
MT2
MT2
3
gate
MT1
2
G
tab
MT2
MT2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state
-
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T_mb ≤ 107 ˚C
-
full sine wave; T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 6 A; I_G = 0.2 A;
on-state current after
dI_G/dt = 0.2 A/µs
triggering
T2+ G+
-
T2+ G-
-
T2- G-
-
T2- G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
-500
500¹
MAX.
-600
600¹
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
October 1997
1
Rev 1.100