BT132 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Triacs logic level

Philips Semiconductors
Triacs
logic level
Product specification
BT132 series D
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope, intended
for use in general purpose
bidirectional switching and phase
control applications. These devices
are intended to be interfaced directly
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. UNIT
V_DRM
I_T(RMS)
I_TSM
BT132- 500D 600D
Repetitive peak off-state voltages
500 600 V
RMS on-state current
1
1A
Non-repetitive peak on-state current 16 16 A
PINNING - TO92
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1 main terminal 2
2 gate
T2
T1
3 main terminal 1
3 21
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state
-
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T_lead ≤51 ˚C
-
full sine wave; T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 1.5 A; I_G = 0.2 A;
on-state current after
dI_G/dt = 0.2 A/µs
triggering
T2+ G+
-
T2+ G-
-
T2- G-
-
T2- G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-500
500¹
-600
600¹
1
16
17.6
1.28
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
January 1998
1
Rev 1.000