BSS84AKS_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – 50 V, 160 mA dual P-channel Trench MOSFET

BSS84AKS
50 V, 160 mA dual P-channel Trench MOSFET
Rev. 1 — 23 May 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) package using Trench MOSFET technology.
1.2 Features and benefits
„ Logic-level compatible
„ Very fast switching
„ Trench MOSFET technology
„ ESD protection up to 1 kV
„ AEC-Q101 qualified
1.3 Applications
„ Relay driver
„ High-speed line driver
„ High-side loadswitch
„ Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Per transistor
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = -10 V; T_amb = 25 °C
Static characteristics (per transistor)
R_DSon
drain-source on-state
resistance
V_GS = -10 V; I_D = -100 mA;
T_j = 25 °C
Min Typ Max Unit
-
-
-20 -
[1] _-
-
-50 V
20 V
-160 mA
-
4.5 7.5 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm².