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BSS84AKMB_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 50 V, single P-channel Trench MOSFET | |||
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BSS84AKMB
50 V, single P-channel Trench MOSFET
Rev. 1 â 6 June 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
ï® Logic-level compatible
ï® Very fast switching
ï® Trench MOSFET technology
ï® ElectroStatic Discharge (ESD)
protection up to 1 kV
ï® Ultra thin package profile with
0.37 mm height
1.3 Applications
ï® Relay driver
ï® High-speed line driver
ï® High-side load switch
ï® Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = -10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state VGS = -10 V; ID = -100 mA; Tj = 25 °C
resistance
Min Typ Max Unit
-
-
-50 V
-20 -
20 V
-
-
-230 mA
-
4.5 7.5 â¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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