BSS138BKW_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V, 320 mA N-channel Trench MOSFET

BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 — 12 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
 Logic-level compatible
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 1.5 kV
 AEC-Q101 qualified
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j = 25 °C
-
-
60 V
V_GS
gate-source voltage
-20 -
20 V
I_D
drain current
V_GS = 10 V; T_amb = 25 °C ^[1] -
-
320 mA
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 320 mA;
-
1
1.6 Ω
resistance
T_j = 25 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².