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BSS138BKW Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V, 320 mA N-channel Trench MOSFET | |||
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BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 â 12 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
ï® Logic-level compatible
ï® Very fast switching
ï® Trench MOSFET technology
ï® ESD protection up to 1.5 kV
ï® AEC-Q101 qualified
1.3 Applications
ï® Relay driver
ï® High-speed line driver
ï® Low-side loadswitch
ï® Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj = 25 °C
-
-
60 V
VGS
gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C [1] -
-
320 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 320 mA;
-
1
1.6 â¦
resistance
Tj = 25 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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