BSS138BKS_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – 60 V, 320 mA dual N-channel Trench MOSFET

BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 12 August 2011
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
 Logic-level compatible
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 1.5 kV
 AEC-Q101 qualified
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics (per transistor)
T_j = 25 °C
V_GS = 10 V;
T_amb = 25 °C
R_DSon
drain-source on-state V_GS = 10 V;
resistance
I_D = 320 mA; T_j = 25 °C
Min Typ Max Unit
-
-
-20 -
[1] _-
-
60 V
20 V
320 mA
-
1
1.6 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm².