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BSS138BKS Datasheet, PDF (1/18 Pages) NXP Semiconductors – 60 V, 320 mA dual N-channel Trench MOSFET | |||
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BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 â 12 August 2011
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
ï® Logic-level compatible
ï® Very fast switching
ï® Trench MOSFET technology
ï® ESD protection up to 1.5 kV
ï® AEC-Q101 qualified
1.3 Applications
ï® Relay driver
ï® High-speed line driver
ï® Low-side loadswitch
ï® Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics (per transistor)
Tj = 25 °C
VGS = 10 V;
Tamb = 25 °C
RDSon
drain-source on-state VGS = 10 V;
resistance
ID = 320 mA; Tj = 25 °C
Min Typ Max Unit
-
-
-20 -
[1] -
-
60 V
20 V
320 mA
-
1
1.6 â¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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