BSS123 Datasheet, PDF (1/4 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

Philips Semiconductors
N-channel TrenchMOS transistor
Logic level FET
Product specification
BSS123
FEATURES
SYMBOL
• ’Trench’ technology
• Extremely fast switching
• Logic level compatible
• Subminiature surface mounting
package
d
g
s
QUICK REFERENCE DATA
V_DSS = 100 V
I_D = 150 mA
R_DS(ON) ≤ 6 Ω (V_GS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect transistor in a plastic
envelope
using
’trench’
technology.
Applications:-
• Relay driver
• High-speed line driver
• Telephone ringer
The BSS123 is supplied in the
SOT23 subminiature surface
mounting package.
PINNING
PIN
DESCRIPTION
1 gate
2 source
3 drain
SOT23
3
Top view
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
T_j = 25 ˚C to 150˚C
T_j = 25 ˚C to 150˚C; R_GS = 20 kΩ
T_a = 25 ˚C
T_a = 25 ˚C
T_a = 25 ˚C
MIN.
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
150
600
0.25
150
UNIT
V
V
V
mA
mA
W
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-a}
Thermal resistance junction
to ambient
CONDITIONS
surface mounted on FR4 board
TYP.
500
MAX.
-
UNIT
K/W
August 2000
1
Rev 1.000