BSP100 Datasheet, PDF (1/8 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor

Philips Semiconductors
N-channel enhancement mode
TrenchMOS™ transistor
Product specification
BSP100
FEATURES
SYMBOL
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• High thermal cycling performance
• Low thermal resistance
d
g
s
QUICK REFERENCE DATA
V_DSS = 30 V
I_D = 6 A
R_DS(ON) ≤ 100 mΩ (V_GS = 10 V)
R_DS(ON) ≤ 200 mΩ (V_GS = 4.5 V)
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect transistor in a plastic
envelope
using
’trench’
technology.
Applications:-
• Motor and relay drivers
• d.c. to d.c. converters
• Logic level translator
The BSP100 is supplied in the
SOT223 surface mounting
package.
PINNING
PIN
DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
SOT223
4
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
I_DM
P_D
T_j, T_stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
T_j = 25 ˚C to 150˚C
T_j = 25 ˚C to 150˚C; R_GS = 20 kΩ
T_sp = 25 ˚C
T_sp = 100 ˚C
T_amb = 25 ˚C
T_sp = 25 ˚C
T_sp = 25 ˚C
MIN.
-
-
-
-
-
-
-
-
- 65
MAX.
30
30
± 20
6¹
4.4
3.2
24
8.3
150
UNIT
V
V
V
A
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-sp}
R_{th j-amb}
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
CONDITIONS
surface mounted, FR4
board
surface mounted, FR4
board
TYP.
12
70
MAX.
15
-
UNIT
K/W
K/W
1 Continuous current rating limited by package
February 1999
1
Rev 1.000