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BSH205G2_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET | |||
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BSH205G2
20 V, P-channel Trench MOSFET
29 April 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
⢠Low threshold voltage
⢠Low on-state resistance
⢠Trench MOSFET technology
⢠Enhanced power dissipation capability of 890 mW
⢠AEC-Q101 qualified
3. Applications
⢠Relay driver
⢠High-speed line driver
⢠High-side loadswitch
⢠Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ⤠5 s
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
Min Typ Max Unit
-
-
-20 V
-8
-
8
V
[1]
-
-
-2.3 A
-
120 170 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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