BSH121 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

BSH121
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 August 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
BSH121 in SOT323.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Low threshold voltage
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
c
c
s Logic level translator.
4. Pinning information
Table 1: Pinning - SOT323, simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
3
2
source (s)
3
drain (d)
1
2
Top view
MBC870
SOT323
Symbol
d
g
03ab30
s
N-channel MOSFET
1. TrenchMOS is a trademark of Royal Philips Electronics.