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BSH112 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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BSH112
N-channel enhancement mode ï¬eld-effect transistor
Rev. 01 â 25 August 2000
M3D088
Product speciï¬cation
1. Description
N-channel enhancement mode ï¬eld-effect transistor in a plastic package using
TrenchMOSâ¢1 technology.
Product availability:
BSH112 in SOT23.
2. Features
s TrenchMOS⢠technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package
s Gate-source ESD protection diodes.
3. Applications
s Relay driver
c
c
s High speed line driver
s Logic level translator.
4. Pinning information
Table 1: Pinning - SOT23, simpliï¬ed outline and symbol
Pin
Description
Simpliï¬ed outline
1
gate (g)
3
2
source (s)
3
drain (d)
03ab44
1
2
SOT23
Symbol
d
g
03ab60
s
N-channel MOSFET
1. TrenchMOS is a trademark of Royal Philips Electronics.
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